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Silicon rectifier diode 2CZ132
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1 Structure: Silicon diffusion type mesa, metal sealed, 19.5 gram per piece
2 CharSilicon rectifier diodeacteristic
Entity encapsulation, good sealing ,high reliability Good thermal performance, temperature shock resistance, High back pressure3 standard: national military standard of GJB33-85 Q/FR20025-93
4 application: widely used for rectifier circuit in all kinds of electrical appliances, electronic equipments.
model
| Reverse not Repeat peak voltage VRSM | Reverse peak voltage VRWM | Rectifier output average current IOa | Positive not repeat surge current IFSM | Work junction temperatue Tj | Store Temperature Tstg |
Low pressure | |
V | V | A | A | °C | °C | Pa | ||
2CZ132 | 1200 | 900 | 20 | 200 | -55~150 | -55~150 | 4×104 | |
Test condition | TC≤70°C | IO=20A tp=10ms TA=25°C | ||||||
a Tc>70°C,lower voltage as 0.25A/°C | ||||||||
Electrical characteristic
Para name | symbols | Test condition | Standard data | unit | |
Min | Max | ||||
reverse current | IR(AV)1 | VR=VRWM | — | 3 | μA |
IR(AV)2 | VR= VRWM TC=125°C | — | 10 | mA | |
forward voltage | VFa | IF=20A | — | 1.6 | V |
VF(AV)a | IF(AV)=20A | 1.2 | v | ||
Thermal resistance | R(th)j-c | IF=5A t=1s | — | 5 | K/W |
Two tests available to choose one | |||||
Silicon rectifier diode 2CZ132
