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Silicon rectifier diode 2CZ021
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1 Structure: Silicon diffusion type mesa
2 Characteristic
15 gram per piece, Entity encapsulation, bolt metal sealing, high reliability Good thermal performance, temperature shock resistance, Large current
3 standard: national military standard of GJB33-85 Q/FR20025-93
4 application: widely used for rectifier circuit in all kinds of electrical appliances, electronic equipments.
model
| Reverse not Repeat peak voltage VRSM | Reverse peak voltage VRWM | Rectifier output average current IOa | Positive not repeat surge current IFSM | Work junction temperatue Tj | Store Temperature Tstg | |
V | V | A | A | °C | °C | ||
2CZ021 | 300 | 200 | 25 | 160 | -40~150 | - 40~150 | |
Test condition | TC≤50°C | tP=10ms TA=25°C | |||||
a Tc>80°C,lower voltage as 4.3mA/°C | |||||||
Electrical characteristic
Para name | symbols | Test condition | Standard data | unit | |
Min | Max | ||||
reverse current | IR1 | VR=200V | — | 5 | μA |
IR2 | VR=200V TC=150°C | — | 2 | mA | |
forward voltage | VFa | IF=25A | — | 11.5 | V |
Thermal resistance | R(th)j-c | IF=5A t=5s | — | 4 | K/W |
Pulse method: pulse width 300 μ s, ≤ 2% | |||||
Silicon rectifier diode 2CZ021
