Silicon bipolar NPN power switching transistor DK150

1 power switching transistor 2metal sealing 3 19.5gram per piece 4 High breakdown voltage 5strong ability against burning

1 The product structure: Silicon bipolar NPN power switching transistor,silicon NPN extension flat type, metal hermetic sealing

2 Characteristics:

       2 gram per piece       Short opened or cut-off time High breakdown voltage       great dissipation power        light weight, small volumn

3 standard: national  standard of ΙΙ GB4589.1-89 GB12560-90 Q/FR115-93

4 application:  widely used in switch circuit,  amplifier circuit, etc.

Para name	symbols	DK150A	DK150B	DK150C	DK150D	DK150E	DK150F	DK150J	DK150H	unit
collector-base voltage (IE=0)	VCBO	300	350	400	450	500	550	600	700	V
collector-emitter voltage (IB=0)	VCEO	300	350	400	450	500	550	600	700	V
Emitter-base voltage (IC=0)	VEBO	5								V
collector DC current	IC	10								A
Base DC current	IB	1								A
Total dissipation power TC≤25°C TC=75°C TC>25°C Lower voltage	Ptot	250 150 2								W   W/°C
Working temperature	Tj	150								°C
Store temperature	Tstg	-55~175								°C

     

Silicon bipolar NPN power switching transistor DK150