Silicon bipolar NPN power switch transistor 3DK4563DK456

1 metal sealing 2 66 gram per piece 3 Short opened or cut-off time 4 small saturation pressure drop

1 The product structure: silicon NPN extension flat type, metal hermetic sealing

2 Characteristics:

       66 gram per piece       Short opened or cut-off time       small saturation pressure drop        light weight, small volumn

3 standard: national standard of ΙΙ GJB33A-97 Q/FR20115-2002(3DK456)Q/FR20121-2002(3DK456E)

4 application:  widely used in switch circuit,  amplifier circuit, etc. 

Para name	symbols	data	unit
collector-base voltage (IE=0)	VCBO	350	V
collector-emitter voltage (IB=0)	VCEO	300	V
Emitter-base voltage (IC=0)	VEBO	12	V
collector DC current	IC	40	A
Total dissipation power TC≤25°C TC>25°C Lower voltage	Ptot	250 1.67	W   W/°C
Working temperature	Tj	150	°C
Store temperature	Tstg	-65~175	°C

outline dimension

Electrical diagram

     

Silicon bipolar NPN power switch transistor 3DK4563DK456