Silicon bipolar NPN power switching transistor 3DK023F

1 metal hermetic sealing 2 1 gram per piece 3 Short opened or cut-off time 4 small saturation pressure drop

1 The product structure: silicon NPN extension flat type, metal hermetic sealing

2 Characteristics:

       1 gram per piece       Short opened or cut-off time        small saturation pressure drop

3 standard: national standard of ΙΙ GB4589.1-89 GB12560-90 Q/FR96-91

4 application:  widely used in switch circuit,  amplifier circuit, etc. 

Para name	symbols	data	unit
collector-base voltage (IE=0)	VCBO	250	V
collector-emitter voltage (IB=0)	VCEO	200	V
Emitter-base voltage (IC=0)	VEBO	6	V
collector DC current	IC	1	A
Base DC current	IB	0.5	A
Total dissipation power TC≤25°C TC>25°C Lower voltage	Ptot	1 0.008	W   W/°C
Working temperature	Tj	150	°C
Store temperature	Tstg	-55~175	°C

outline dimension

Silicon bipolar NPN power switching transistor 3DK023F