Silicon bipolar NPN power switching transistor 3DK35(3DK104)

1 metal hermetic sealing 2 12 gram per piece 3 working frequency more than 20 kHz.& Short opened or cut-off time

1 The product structure: silicon NPN extension flat type, metal hermetic sealing

2 Characteristics:

       12 gram per piece        0.2 V. of typical values, Small saturation pressure drops        A high reliability.

3 standard: national standard of ΙΙ GB4936.1-85 Q/FR51-88

4 application:  widely used in switch circuit, amplifying circuit, etc.

 

Para name	symbols	3DK35B (3DK104B)	3DK35C (3DK104C)	3DK35D (3DK104D)	3DK35E (3DK104E)	3DK35F (3DK104F)	unit
collector-base voltage (IE=0)	VCBO	50	80	110	150	200	V
collector-emitter voltage (IB=0)	VCEO	50	80	110	150	200	V
Emitter-base voltage (IC=0)	VEBO	5					V
collector DC current	IC	3					A
Base DC current	IB	0.5					A
Total dissipation power TC≤25°C TC=75°C TC>25°C Lower voltage	Ptot	15 10 0.1					W   W/°C
Working temperature	Tj	175					°C
Store temperature	Tstg	-55~175					°C

Temperature curve                           

   

Dc safety work area

Silicon bipolar NPN power switching transistor 3DK35(3DK104)