Silicon bipolar NPN power switching transistor 3DK4563DK456

1 metal hermetic sealing 2 23 gram per piece 3 Short opened or cut-off time 4 high output current

1 The product structure: silicon NPN extension flat type, metal hermetic sealing

2 Characteristics:

       23 gram per piece       Short opened or cut-off time       high output current

3 standard: national standard of ΙΙ GJB33A-97 Q/FR20115-2002(3DK456)Q/FR20121-2002(3DK456E)

4 application:  widely used in switch circuit,  amplifier circuit, etc. 

Para name	symbols	3DK456	3DK456E	unit
collector-base voltage (IE=0)	VCBO	1000	600	V
collector-emitter voltage (IB=0)	VCEO	600	500	V
Emitter-base voltage (IC=0)	VEBO	13	8	V
collector DC current	IC	40	20	A
Total dissipation power TC≤25°C TC=75°C TC>25°C Lower voltage	Ptot	300 200 2	350 233 2.3	W   W/°C
Working temperature	Tj	175	200	°C
Store temperature	Tstg	-55~175	-65~200	°C

outline dimension

Silicon bipolar NPN power switching transistor 3DK4563DK456